| Parameter | Typical value | Meaning | |-----------|--------------|---------| | Type | NPN Silicon | Polarity | | VCEO | 20V | Max collector-emitter voltage | | VCBO | 30V | Max collector-base voltage | | IC | 50mA | Max continuous collector current | | PC | 200~300mW | Max power dissipation (depends on package: TO-92 or SOT-89) | | hFE (DC gain) | 50~250 (typ. 90) | Current gain @ 10mA | | fT | ~600 MHz | Transition frequency (RF use) | | NF | 3~5 dB | Noise figure (at ~100 MHz) |
Important: The exact values vary by manufacturer suffix (e.g., 2SC1124-O, -Y, -GR). Always check the "hFE classification" table in the datasheet. c1124 transistor datasheet better
Despite the poor documentation, here are the verified absolute maximum ratings for a standard 2SC1124. You need these numbers to find a better replacement. | Parameter | Typical value | Meaning |
| Parameter | Symbol | Value | Unit | | :--- | :--- | :--- | :--- | | Collector-Base Voltage | ( V_CBO ) | 100 | V | | Collector-Emitter Voltage | ( V_CEO ) | 60 | V | | Emitter-Base Voltage | ( V_EBO ) | 6 | V | | Collector Current (DC) | ( I_C ) | 3 | A | | Collector Current (Pulse) | ( I_CP ) | 5 | A | | Collector Dissipation | ( P_C ) | 20 (with heatsink) | W | | Junction Temperature | ( T_J ) | 150 | °C | | DC Current Gain (( h_FE )) | at 500mA | 60 – 240 | - | Despite the poor documentation, here are the verified
Better Insight: The ( V_CBO ) of 100V and ( V_CEO ) of 60V suggests this is not a high-voltage transistor. It is a medium-power, medium-speed device. The ( h_FE ) drops off rapidly after 1A, so do not use this above 2A continuously.
The original C1124 has a narrow DC SOA. A better replacement will have a flatter, wider SOA. Look for a transistor that can handle 60V at 1A DC without thermal runaway.